20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (201) 376-2922 (212) 227-6005 telex: 13-8720 high speed silicon controlled rectifier 1200 volts, 650 a rms c397/c398 maximum allowable ratings types c397/c398e c397/c398m c397/c398s c397/c398n c397/C398T c397/c398p c397/c398pa c397/c398pb repetitive peak off-state voltage, vdrm' tj - -40c to +125'c 500 volts 600 700 800 900 1000 1100 1200 repetitive peak reverse voltage, vrrm> tj - -40c to -m25c 500 volts 600 700 800 900 1000 1100 1200 non-repetitive peak reverse voltage, vrsm ' tj - 125c 600 volts 720 840 960 1080 1200 1300 1400 ' half sine wave waveform, 10 ids max. pulse width. peak one cycle surge (non-repetitive) on-state current, itsm 7500 amperes i2t (for fusing) for times > 1.5 milliseconds 95,000 (rms ampere)2 seconds i2t (for fusing) for limes > 8.3 milliseconds 230,000 (rms ampere)2 seconds critical rntc-of-rise of on-state current, non-repetitive 800 a/^s t critical rate-of-rise of on-state current, repetitive 500 a/ms f average gate power dissipation, pg(av) '? 2 watts storage temperature, tstp -40c to +150c operating temperature, tj , -40c to +125c mounting force required 2000 lb, 10% 8.9 kn 10% quality semi-conductors
i c397/c398 characteristics test repetitive peak reverse and off-state current repetitive peak reverse and off-state current thermal resistance critical rate-of-rise of off-state voltage (higher values may cause device switching) symbol 'kkm and 'drm 'hum and 'dkm rojc dv/dt min. " 200 typ. 5 20 .05 500 max. 20 45 .06 units ma ma 0 07 watt v/jjsec test condition tj - +25c v = vdrm = vrrm tj = 125c v = vdkm = vrkm junction-to-case (dc) (double-side cooled) tj = 125c, gate open. vdrm = rated, linear or exponential rising waveform. fvnnnentn! dv/dt - ui*m ( rtt>1 hipier minimum ilv/clt selections available - consult factory. dc gate trigger current dc gate trigger voltage peak on-state voltage turn-on delay time conventional circuit commutatcd turn-off time (with reverse voltage) c398 c397 c39s c397 conventional circuit commutated turn-off time (with feedback diode) c398 c397 igt vgt v-,-m t,i 'q li](ilioili-) - _ - - 0. ! 5 - ?- 50 75 is 3 1.25 - 2.7 0.5 20 35 30 45 '10 60 150 300 125 5 3,0 - 3.0 " t t 40 co t t madc vdc volts fj so c /jsec a' sec tc = +25c, vd = 6 vdc, rl = 3 ohms tc = -40c, vd = 6 vdc, rl = 3 ohms tc = +125c, vd = 6 vdc, rl = 3 ohms tc = -40c to 25c, vd = 6 vdc, rl = 3 ohms tc- = 25c to +i25c, vd = 6 vdc, rl = ?' ohms tc = i25c, vmui, r,. = 1000 ohms tc = ?'?25"c, i i-m = 3000 amps peak. duty cycle < .01%. pulse width = 1 ms. tc = +25c, itm = 50 adc, vdrm. gate supply: 20 volt open circuit, 20 ohms, 0.1 /usec max. rise time, ft.ttt (1) tc = +125c (2) itm = 500 amps. (3) vr = 50 volts min. (4)' v|irm (reapplied) (5) rate-of-rise of reappb'ed off-state voltage = 20 v/^sec (linear) (6) commutation cli/ilt = 25 amps/^(sec (7) repetition rate = 1 pps, (8) gate bias during turn-off interval = 0 volts, 100 ohms (1) tr = +125c c) itm = soo amps. (3) vr = 50 volts min. (4) vi)km (reapplied) (5) rate-of-rise of reappliecl off-state voltape = 200 v/aisl-c (linear) (6) commutation di/dt = 25 amps/yl/sec (7) repetition rate = 1 pps. 8) gate bias during turn-off interval = 0 volts, 100 ohms (1) tc = +125c (2) itm = ^00 amps 3) v,, = 1 volt 4) vdrw (reapplied) (5) rate-of-rise ol renpplivd off-state voltage = 200 v/a/sec (linear) (6) commutation di/dt = 25 amps//jsec 7) repetition rate = 1 pps. (8) gate bias during turn-off interval = 0 volts, 100 ohms
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